收藏本站
SiR850DP
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
30
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
0.007 at V GS = 10 V
25
0.009 at V GS = 4.5 V
I D (A) a
30 a
a
Q g (Typ.)
8.4 nC
FEATURES
? Halogen-free
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? 100 % UIS Tested
RoHS
COMPLIANT
PowerPAK SO-8
APPLICATIONS
? Synchronous Buck
- High-Side
6.15 mm
1
S
S
5.15 mm
D
2
3
S
G
4
D
8
7
D
D
G
6
5
D
Bottom View
Ordering Information: SiR850DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
25
± 20
30 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
L = 0.1 mH
T C = 25 °C
T A = 25 °C
I D
I DM
I AS
E AS
I S
30 a
20.1 b, c
16.1 b, c
70
35
61
30 a
4 b, c
A
mJ
A
T C = 25 °C
41.7
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
26.7
4.8 b, c
W
T A = 70 °C
3.1 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
21
2.4
26
3.0
°C/W
Notes:
a. Based on T C = 25 °C. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile ( http://www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 68825
S-82287-Rev. B, 22-Sep-08
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SIR862DP-T1-GE3 MOSFET N-CH 25V 8-SOIC
SIR878ADP-T1-GE3 MOSFET N-CH 100V 40A POWERPAK
SIR878DP-T1-GE3 MOSFET N-CH 100V 8-SOIC
SIR888DP-T1-GE3 MOSFET N-CH 25V 40A PPAK 8SOIC
SIR890DP-T1-GE3 MOSFET N-CH 20V 50A PPAK 8SOIC
SIR892DP-T1-GE3 MOSFET N-CH 25V 50A PPAK 8SOIC
SIR928-6C-F LED IR SIDE GAA1AS WATER CLR AXL
SIRA02DP-T1-GE3 MOSFET N-CH 30V 50A SO-8
相关代理商/技术参数
SIR852160-WJ 制造商:CELDUC 制造商全称:celduc-relais 功能描述:New Solid State Relay compact size pitch 22,5mm with spring terminals
SIR862DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 25-V (D-S) MOSFET
SIR862DP-T1-GE3 功能描述:MOSFET N-CH 25V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:TrenchFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
SIR864DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET
SIR864DP-T1-GE3 功能描述:MOSFET 30V 40A N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR866DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET
SIR866DP-T1-GE3 功能描述:MOSFET 20V 60A 83W 1.9mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIR870ADP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 100 V (D-S) MOSFET